收藏本站
IXTA3N50D2
IXTP3N50D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
V DS = 30V, I D = 1.5A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
1.3
2.1
1070
102
24
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Resistive Switching Times
V GS = ± 5V, V DS = 250V, I D = 1.5A
R G = 3.3 Ω (External)
27
71
56
42
40
ns
ns
ns
ns
nC
1. Gate
2. Drain
3. Source
4. Drain
Bottom
Side
Q gs
V GS = 5V, V DS = 250V, I D = 1.5A
5
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
20
nC
1.00 ° C/W
A
b
b2
c
4.06
0.51
1.14
0.40
4.83
0.99
1.40
0.74
.160
.020
.045
.016
.190
.039
.055
.029
R thCS
TO-220
0.50
° C/W
c2
D
1.14
8.64
1.40
9.65
.045
.340
.055
.380
D1
E
E1
8.00
9.65
6.22
8.89
10.41
8.13
.280
.380
.270
.320
.405
.320
Safe-Operating-Area Specification
Symbol Test Conditions
SOA V DS = 400V, I D = 0.19A, T C = 75 ° C, Tp = 5s
Characteristic Values
Min. Typ. Max.
75
W
e
L
L1
L2
L3
L4
2.54
14.61
2.29
1.02
1.27
0
BSC
15.88
2.79
1.40
1.78
0.13
.100
.575
.090
.040
.050
0
BSC
.625
.110
.055
.070
.005
TO-220 (IXTP) Outline
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
V SD
t rr
I RM
Q RM
I F = 3A, V GS = -10V, Note 1
I F = 3A, -di/dt = 100A/ μ s
V R = 100V, V GS = -10V
0.8
340
10.9
1.86
1.3
V
ns
A
μ C
Pins:
1 - Gate
2 - Drain
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
3 - Source
4 - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTA3N60P MOSFET N-CH 600V 3A D2-PAK
IXTA48N20T MOSFET N-CH 200V 48A TO-263
IXTA50N25T MOSFET N-CH 250V 50A TO-263
IXTA5N60P MOSFET N-CH 600V 5A D2-PAK
IXTA60N10T MOSFET N-CH 100V 60A TO-263
IXTA6N50D2 MOSFET N-CH 500V 6A D2PAK
IXTA6N50P MOSFET N-CH 500V 6A D2-PAK
IXTA70N075T2 MOSFET N-CH 75V 70A TO-263
相关代理商/技术参数
IXTA3N50P 功能描述:MOSFET 3.6 Amps 500 V 2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA3N60P 功能描述:MOSFET 3 Amps 600V 2.9 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA42N25P 功能描述:MOSFET 42 Amps 250V 0.084 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA44N15T 功能描述:MOSFET 44 Amps 150V 45 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA44N25T 功能描述:MOSFET 44 Amps 250V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA44N30T 功能描述:MOSFET 44 Amps 300V 85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA44P15T 功能描述:MOSFET -44 Amps -150V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA44P15TTRL 制造商:IXYS Corporation 功能描述:MOSFET P-CH 150V 44A TO-263